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Title: China Develops Flash Memory 10,000x Faster With 400-Picosecond Speed

Link: https://hardware.slashdot.org/story/25/04/18/...

Longtime Slashdot reader hackingbear shares a report from Interesting
Engineering: A research team at Fudan University in Shanghai, China has built
the fastest semiconductor storage device ever reported, a nonvolatile flash
memory dubbed "PoX" that programs a single bit in 400 picoseconds
(0.0000000004 s) -- roughly 25 billion operations per second. Conventional
static and dynamic RAM (SRAM, DRAM) write data in 1-10 nanoseconds but lose
everything when power is cut while current flash chips typically need micro
to milliseconds per write -- far too slow for modern AI accelerators that
shunt terabytes of parameters in real time. The Fudan group, led by Prof.
Zhou Peng at the State Key Laboratory of Integrated Chips and Systems, re-
engineered flash physics by replacing silicon channels with two dimensional
Dirac graphene and exploiting its ballistic charge transport. Combining
ultralow energy with picosecond write speeds could eliminate separate
highspeed SRAM caches and remove the longstanding memory bottleneck in AI
inference and training hardware, where data shuttling, not arithmetic, now
dominates power budgets. The team [which is now scaling the cell architecture
and pursuing arraylevel demonstrations] did not disclose endurance figures or
fabrication yield, but the graphene channel suggests compatibility with
existing 2Dmaterial processes that global fabs are already exploring. The
result is published in the journal Nature.

Read more of this story at Slashdot.

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